w w w w cd6c60s cd6c60s cd6c60s cd6c60s rev.a sep .2010 copyright@winsemi semiconductor co., ltd., all right reserved. silicon silicon silicon silicon controlled controlled controlled controlled rectifiers rectifiers rectifiers rectifiers features ? repetitive peak off-state voltage : 600v ? r.m.s on-state current ( it(rms)= 6 a ) ? low on-state voltage (1.6v( max .) @ i tm ) general description sensitive gate triggering scr is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. absolute maximum ratings ( t j = 25 c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 600 v i t(av) average on-state current ( 180 conduction angle ) t c = 110 c 3.8 a i t(rms) r.m.s on-state current ( 180 conduction angle ) t c = 110 c 6 a i tsm surge on-state current 1/2 cycle, 60hz, sine wavenon-repetitive 66 a i 2 t i 2 t for fusing t = 10 ms 21 a 2 s di/dt critical rate of rise of on-state current f=60hz,tj=125 c 50 a/ ? p gm forward peak gate power dissipation 5 w p g(av) forward average gate power dissipation tj=125 c 0.5 w i fgm forward peak gate current 2 a v rgm reverse peak gate voltage 5.0 v t j operating junction temperature -40~125 c c t stg storage temperature -40~150 c c thermal characteristics symbol parameter value units r j c thermal resistance junction to case(dc) 3.12 /w r j a thermal resistance junction to ambient (dc) 89 /w
w w w w cd6c60s cd6c60s cd6c60s cd6c60s 2 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance electrical characteristics (t c =25 unless otherwise noted) symbol parameter test conditions value units min min min min typ typ typ typ max max max max i drm repetitive peak off-state current v ak =v drm t c =25 t c =125 - - 10 a - - 200 a v tm peak on-state voltage (1) itm= 9 a, tp=380 ? - - 1. 6 v i gt gate trigger current (2) v ak = 6 v (dc) ,r l = 10 ? t c =125 - - 0.2 m a v gt gate trigger voltage (2) v d =6v(dc),r l =10 ? t c =125 - - 1.5 v v gd non-trigger gate voltage (1) v ak = 12v, r l = 100 t c =125 0. 2 v dv/dt critical rate of rise off-state voltage linear slope up to v d =67%v drm , gate open t j =125 200 - - v/ ? i h holding current i t = 100 ma, gate open t c =25 - - 20 ma i l latching current i g =1.2 i gt - 50 - ma *notes: *notes: *notes: *notes: 1.pulse width 1.0ms,duty cycle 1% 2.r gk current not included in measurement.
w w w w cd6c60s cd6c60s cd6c60s cd6c60s 3 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig. fig. fig. fig. 3 3 3 3 relative variation of gate trigger current and holding current versus junction temperature fig. fig. fig. fig. 4 4 4 4 maximum permissible non -repetitive peak on-state current itsm,versus number of cycles,for sinusoidal currents.f=60hz fig.5 fig.5 fig.5 fig.5 c orrelation between maximum average power dissipation and maximum allowable temperatures (tamb and tcase )for different thermal resistances heatsink+contact. fig.6 fig.6 fig.6 fig.6 non-repetitive surge peak on-state current for a sinusoidal pulse with width tp 10ms and corresponding value of l 2 t fig.1 fig.1 fig.1 fig.1 average on -state current versus case temperature fig fig fig fig .2 .2 .2 .2 correlation between maximum average p ower dissipation and maximum allowable tem - p eratures (tamb and tcase)for different thermal r esistances h eatsink+contact
w w w w cd6c60s cd6c60s cd6c60s cd6c60s 4 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance fig.8 fig.8 fig.8 fig.8 transient thermal impedance z th j-mb ,versus pulse width t p fig. fig. fig. fig. 7 7 7 7 on-state characteristics(maximum values)
w w w w cd6c60s cd6c60s cd6c60s cd6c60s 5 / 5 steady, steady, steady, steady, all all all all for for for for your your your your advance advance advance advance to25 to25 to25 to25 2 2 2 2 package package package package dimension dimension dimension dimension unit: mm
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